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Lindberg tube (glass) furnace can be heated up to 1100 C to grow oxide on silicon wafer under ambient conditions. Furnace is run in batch conditions. Typical SiO2 growth on Silicon substrate is ~430 nm for 15 hr run and ~820 nm for 80 hr run at 1100 C.
IMSE Contact & Approved Trainer:
Rahul Gupta (email@example.com)
NOTE: User must demonstrate skills to IMSE staff before independent use.
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