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The Kurt Lesker PVD 75 Physical Vapor Deposition system allows material deposition on substrates by sputtering material from a solid source (also called "target" material). A plasma based Ar sputtering process is used to deposit material of desired thickness at ~0.5 nm/s growth rates. In addition, reactive gases such as oxygen can be added to deposit oxides form of solid source material. Available target materials are: Al, SiO2, Niobium, SiN, ZnO, Cu, Zn, Ti. In addition, substrate can be heated to control deposited film properties.
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Rahul Gupta (email@example.com)
NOTE: User must demonstrate skills to IMSE staff before independent use.
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Quartz Crystal Microbalance (QCM) — Read Section 7.3 for calibration procedure and Appendix A for parameters for selected material.