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The instrument can deposit materials for applications in which high purity film and/or directionality of film growth is important. The deposition is done at a very high vacuum ~1e-9 torr. Currently, the materials that can be deposited are Al, AlO2, Nb, Ti. Oxygen gas is available to oxidize films in a controllable manner. Other materials are not possible due to conflicts with ongoing research and limitations in breaking the high vacuum condition. Deposition growth rate can range from 0.1 Angstrom/s to more than 4 Angstrom/s. If you need to deposit other materials, please contact IMSE staff.

IMSE Contact:
Rahul Gupta (rgupta24@wustl.edu)

Approved Trainer:
Daria Kowsari (dariakowsari@wustl.edu)

Training Documents:
NOTE: User must demonstrate skills to IMSE staff before independent use.
Operating instructions

Recipe:
N/A

Technical Info:
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