Micro-fabrication in IMSE Cleanroom

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Spin Coating Photolithography Reactive Ion Etching (Dry Etching) Wet Etching Metal Deposition (Sputtering) Metal Deposition (Thermal) Metal Deposition (E-beam) Metal Patterning Thermal oxidation Chemical Vapor Deposition Plasma based Chemical Vapor Deposition Atomic Layer Deposition Parylene Deposition Ellipsometry Profilometry Probe Station PDMS Fabrication FAQ

Metal Deposition (Sputtering)

Metal Deposition by Sputtering starts with creating high electrical field around source material (or target) of interest. Electrical field creates Plasma and removes material atoms from the source material. These removed material is then deposited on substrate of interested. High mean free path in vaccum ensures that most sputtered (or removed material) is deposited on the substrate of interest.

Plasma source can be either RF or DC. Typically, DC source is used for metal (or electrically conducting) source (or target) material, and RF source is used for insulator source (or target) materials. Ar is primarily the source gas as it is easy to ionize and create plasma. For certain use cases, oxygen can be mixed with Ar to deposit oxide forms on metal source.

Step-by-Step illustration of Metal Deposition Process:

STEP 1: Start with Si wafer (substrate)

STEP 2: Si wafer (substrate) with Aluminum thin film on top

The above process can be carried out in IMSE Facility. IMSE offers Sputter Deposition Tool to accomplish the task safely. Click the link to start the training process.

Thin film metrology

Estimating film deposition peformance (deposition rate, planar roughness, side wall roughness, etc.) is critical to fabricate device at micron scale in repeated manner. IMSE offers number of instruments ( Profilometer, Optical Microscope, In-situ Quartz Crystal Microbalance (QCM) Sensor, SEM) to help in the quantitative measurements.